DocumentCode
1718035
Title
Production test of an RF receiver chain based on ATM combining RF BIST and machine learning algorithm
Author
Darfeuille, Sébastien ; Kelma, Christophe
Author_Institution
Innovation Center RF, NXP Semicond., Caen, France
fYear
2011
Firstpage
653
Lastpage
656
Abstract
Testing an RF device in Production is expensive and technically difficult. At Wafer Test level, the RF probing technologies hardly fulfil the industrial test requirements in terms of accuracy, reliability and cost. At Package test level testing the RF parameters requires expensive RF equipments (RF automated test equipments (ATE)) and for complex RF transceivers, which address multi-modes (RF multi-paths and/or requiring different impedance matchings), it usually leads to prohibitive test time. In order to reduce the test costs for RF devices, different methods are proposed and evaluated in NXP and at competitions. These methods mainly target test time reduction (e.g. by testing parts in parallel) or propose ways of limiting the needs of expensive RF tester in Production (e.g. by using Alternate Test Methods, Design For Test, or Built In Test). In the proposed presentation we will focus on ATM and RF BI(s)T, providing some results on DC-RF correlation and an example of a real case BIT implementation into a fully integrated single-chip receiver operating in the sub-GHz ISM bands 315 MHz to 920 MHz.
Keywords
built-in self test; impedance matching; learning (artificial intelligence); radiofrequency integrated circuits; ATM; DC-RF correlation; RF BIST; RF automated test equipments; RF device testing; RF equipments; RF multipaths; RF parameters; RF probing technologies; RF receiver chain; RF tester; complex RF transceivers; frequency 315 MHz to 920 MHz; fully integrated single-chip receiver; impedance matchings; industrial test requirements; machine learning algorithm; package test level; production test; test time reduction; wafer test level; Correlation; Integrated circuits; Phase locked loops; Production; Radio frequency; Receivers; Semiconductor device measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuit Theory and Design (ECCTD), 2011 20th European Conference on
Conference_Location
Linkoping
Print_ISBN
978-1-4577-0617-2
Electronic_ISBN
978-1-4577-0616-5
Type
conf
DOI
10.1109/ECCTD.2011.6043628
Filename
6043628
Link To Document