• DocumentCode
    1718132
  • Title

    Semiconductor optical amplifier designs for passive optical network extensions

  • Author

    Assadihaghi, A. ; Teimoori, H. ; Benhsaien, A. ; Tolstikhin, V. ; Hall, T.J. ; Hinzer, K.

  • Author_Institution
    Univ. of Ottawa, Ottawa, ON
  • fYear
    2009
  • Firstpage
    289
  • Lastpage
    291
  • Abstract
    We report a polarization insensitive broadband semiconductor optical amplifier design based on an asymmetric multi-quantum well structure. The device operates with 9 dBm saturation output power, 23 dB gain, and <0.8 dB polarization dependency.
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; light polarisation; semiconductor optical amplifiers; semiconductor quantum wells; In1-xGaxAsyP1-y-InP; asymmetric multiquantum well structure; passive optical network extensions; polarization dependency; polarization insensitive broadband semiconductor; saturation output power; semiconductor optical amplifier; Bandwidth; Optical design; Optical fiber networks; Optical materials; Optical polarization; Optical pumping; Optical saturation; Passive optical networks; Semiconductor optical amplifiers; Stimulated emission; Asymmetrical multi-quantum well; semiconductor optical amplifier;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
  • Conference_Location
    Newport Beach, CA
  • ISSN
    1092-8669
  • Print_ISBN
    978-1-4244-3432-9
  • Electronic_ISBN
    1092-8669
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2009.5012516
  • Filename
    5012516