Title :
Quantum dots in a vertical cavity for all-optical switching devices
Author :
Jin, C.Y. ; Kojima, O. ; Kita, T. ; Wada, O. ; Hopkinson, M. ; Akahane, K.
Author_Institution :
Div. of Frontier Res. & Technol., Kobe Univ., Kobe
Abstract :
Self-assembled InAs/GaAs quantum dots (QD) incorporated in a GaAs/AlAs Fabry-Perot cavity have been employed as an optical nonlinear source for vertical-reflection type switches. Switching times of 32~80 ps have been achieved in this novel structure. All-optical switching using excited QD states shows better performance due to fast carrier relaxation between QD energy states. These results demonstrate potential application of QD materials in ultra-fast all-optical switching devices.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical switches; quantum dot lasers; semiconductor quantum dots; semiconductor switches; GaAs-AlAs; GaAs/AlAs Fabry-Perot cavity; InAs-GaAs; all-optical switching devices; carrier relaxation; energy states; optical nonlinear source; self-assembled InAs/GaAs quantum dots; switching times; vertical-reflection type switches; Communication switching; Gallium arsenide; Mirrors; Nonlinear optical devices; Nonlinear optics; Optical devices; Optical interferometry; Optical saturation; Optical switches; Quantum dots; Quantum dots; optical switch; vertical cavity;
Conference_Titel :
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location :
Newport Beach, CA
Print_ISBN :
978-1-4244-3432-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2009.5012517
