Title :
"Semiconductor nanostructure devices: recent advances and their potentials for transducers applications"
Author_Institution :
Inst. of Ind. Sci., Univ. of Tokyo, Japan
Abstract :
Summary form only given. We discuss the current state of quantum well infrared detectors (QWIP) and related devices to clarify potentials of QW in the field of transducers. With the progress of nanotechnology, a number of new devices making use of quantum wires (QWR) and quantum dots (QD) have been realized; they include single electron transistors, QD charge storage devices, interband and intersubband QD photodetectors, QD-based single photon detectors and emitters, and QD-based fluorescent markers. We describe the current state of these devices and discuss their potential. We discuss also the self-organized growth and novel properties of InAs and GaSb quantum ring structures.
Keywords :
gallium compounds; indium compounds; nanotechnology; photodetectors; quantum dots; quantum well devices; quantum wires; self-assembly; single electron transistors; transducers; GaSb; InAs; charge storage devices; fluorescent markers; interband photodetectors; intersubband photodetectors; nanotechnology; quantum dots; quantum ring structures; quantum well infrared detectors; quantum wires; self-organized growth; semiconductor nanostructure devices; single electron transistors; single photon detectors; single photon emitters; transducer applications; FETs; Infrared detectors; Nanotechnology; Optical films; Quantum dot lasers; Quantum dots; Semiconductor films; Semiconductor nanostructures; Transducers;
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05. The 13th International Conference on
Conference_Location :
Seoul, South Korea
Print_ISBN :
0-7803-8994-8
DOI :
10.1109/SENSOR.2005.1496406
