DocumentCode
1718199
Title
Entangled photons produced with high-symmetry site-controlled quantum dots
Author
Mohan, A. ; Felici, M. ; Gallo, P. ; Dwir, B. ; Rudra, A. ; Faist, J. ; Kapon, E.
Author_Institution
Lab. of Phys. of Nanostruct., Ecole Polytech. Fed. de Lausanne (EPFL), Lausanne
fYear
2009
Firstpage
410
Lastpage
411
Abstract
In recent years it has been realized that quantum entanglement could have many applications in the nascent field of quantum information technology [1]. While most existing sources for entangled photons rely on nonlinear optical effects [2], triggered entangled photons provide the benefit of being event-ready for application. The radiative decay of biexcitons in a quantum dot (QD) has been proposed [3] and recently demonstrated [4,5,6] as a source of triggered polarization-entangled photon pairs. However, in most cases the anisotropy-induced exciton fine structure splitting destroys this entanglement. The key to the generation of entangled photon pairs in a QD is therefore the suppression of the exciton polarization splitting. Seeded self-ordering, which involves the self-formation of nanostructures at nucleation sites introduced by a substrate patterning process [7], is particularly attractive because it allows for control over the size and shape of the QD. In particular, pyramidal QDs grown in this way on (111)B GaAs substrates have a higher symmetry (C3v) [8] as compared with self-assembled Stranski-Krastanow QDs (C2v). This feature makes them a prime candidate for efficient sources of entangled photons.
Keywords
III-V semiconductors; biexcitons; gallium arsenide; hyperfine interactions; nucleation; quantum entanglement; semiconductor quantum dots; biexcitons; entangled photons; high-symmetry site-controlled quantum dots; nanostructures; nonlinear optical effects; nucleation sites; quantum entanglement; quantum information technology; radiative decay; self-assembled Stranski-Krastanow quantum dots; triggered polarization-entangled photon pairs; Anisotropic magnetoresistance; Excitons; Geometrical optics; Information technology; Nanostructures; Nonlinear optics; Optical polarization; Quantum dots; Quantum entanglement; Shape control;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location
Newport Beach, CA
ISSN
1092-8669
Print_ISBN
978-1-4244-3432-9
Electronic_ISBN
1092-8669
Type
conf
DOI
10.1109/ICIPRM.2009.5012519
Filename
5012519
Link To Document