Terahertz emission properties from palladium/silicon interface

Author

Kiwa, Toshihiko ; Tsukada, Keiji ; Suzuki, Masato ; Tonouchi, Masayoshi ; Migitaka, Sonoko ; Yokosawa, Koichi

Author_Institution

Dept. of Electr. & Electron. Eng., Okayama Univ., Japan

Volume

1

fYear

2005

Firstpage

263

Abstract

Laser terahertz (THz) emission and detection system for investigating the catalytic metal/semiconductor interface of the hydrogen sensors was proposed and developed. THz radiation from palladium/silicon structures was successfully obtained. The properties of THz radiation under hydrogen and nitrogen gas mixture were investigated. The peak amplitude of THz radiation was decreased by increasing the volume concentration of hydrogen gas. This change in the amplitude can be explained by change in the local field near the surface of silicon. This result indicates that the system a potential tool for nondestructive and noncontact measurement of the hydrogen sensors.

Keywords

gas sensors; hydrogen; nitrogen; palladium; semiconductor-metal boundaries; silicon; submillimetre waves; catalytic metal/semiconductor interface; hydrogen sensors; local field; nitrogen gas mixture; noncontact measurement; nondestructive measurement; palladium/silicon interface; terahertz emission properties; volume concentration; Hydrogen; Laser theory; Metal-insulator structures; Optical pulses; Semiconductor lasers; Sensor systems; Substrates; Surface emitting lasers; Surface morphology; Ultrafast optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05. The 13th International Conference on

Print_ISBN

0-7803-8994-8

Type

conf

DOI

10.1109/SENSOR.2005.1496407

Filename

1496407