Title :
Simulation of electron heating in n-channel submicron Si-MOSFET´s
Author :
Borzdov, V.M. ; Galenchik, V.O. ; Komarov, F.F. ; Mulyarchik, S.G. ; Zhevnyak, O.G.
Author_Institution :
Dept. of Radio Phys. & Electron., Belarus State Univ., Minsk, Russia
Abstract :
The paper deals with the kinetic simulation of electron transport in n-channel submicron Si- MOSFET´s by means of the Monte Carlo method. The developed microscopic model assumes the self-consistent numerical solution of Schrodinger and Poisson equations as well as Monte Carlo simulation of charge carrier drift at high electric field. The model takes into account the quantization of electron energy in the inversion layer of the Si-substrate, transitions of quasi-two-dimensional (Q2D) electrons to three-dimensional (3D) states and vice versa and all main scattering mechanisms for both Q2D and 3D carriers, including electron-electron scattering. On the basis of the model different parameters characterizing electron transport, as well as values of gate current produced by hot-electron injection into oxide, have been calculated
Keywords :
MOSFET; Monte Carlo methods; high field effects; hot carriers; inversion layers; semiconductor device models; semiconductor device reliability; Monte Carlo method; Poisson equation; Schrodinger equation; Si; Si-substrate; charge carrier drift; electron energy quantization; electron heating; electron transport; electron-electron scattering; gate current; high electric field; hot-electron injection; inversion layer; kinetic simulation; microscopic model; n-channel submicron Si-MOSFET; quasi-two-dimensional electrons; scattering mechanisms; self-consistent numerical solution; Acoustic scattering; Charge carriers; Electrons; Heating; Kinetic theory; Microscopy; Monte Carlo methods; Phonons; Poisson equations; Quantization;
Conference_Titel :
Microelectronics, 1997. Proceedings., 1997 21st International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-3664-X
DOI :
10.1109/ICMEL.1997.632875
