Simulation of electron heating in n-channel submicron Si-MOSFET´s

The paper deals with the kinetic simulation of electron transport in n-channel submicron Si- MOSFET´s by means of the Monte Carlo method. The developed microscopic model assumes the self-consistent numerical solution of Schrodinger and Poisson equations as well as Monte Carlo simulation of charge carrier drift at high electric field. The model takes into account the quantization of electron energy in the inversion layer of the Si-substrate, transitions of quasi-two-dimensional (Q2D) electrons to three-dimensional (3D) states and vice versa and all main scattering mechanisms for both Q2D and 3D carriers, including electron-electron scattering. On the basis of the model different parameters characterizing electron transport, as well as values of gate current produced by hot-electron injection into oxide, have been calculated