Title :
Pyroelectric infrared sensors with fast response time and high sensitivity using epitaxial Pb(ZrTi)O3 films on epitaxial γ-Al2O3/Si substrates
Author :
Akai, Daisuke ; Hirabayashi, Keisuke ; Yokawa, Mikako ; Sawada, Kazuaki ; Taniguchi, Yoshiharu ; Murashige, Shinnichi ; Nakayama, Naoto ; Yamada, Tetsuya ; Murakami, Kensukc ; Ishida, Makoto
Author_Institution :
Venture Bus. Lab., Toyohashi Univ. of Technol., Japan
Abstract :
In this paper, we report that a pyroelectric infrared (IR) sensor with fast response time and high sensitivity using epitaxial Pb(Zr,Ti)O3 (PZT) thin films on epitaxial γ-Al2O3/Si substrates has successfully fabricated for the first time. The fabricated sensor operated under chopping frequency of 100 Hz. The values of output signals were 1.6 mVp-p, 0.8 mVp-p and 0.5 mVp-p with the chopping frequencies of 20 Hz, 50 Hz and 100 Hz, respectively. This sensor has potential for Si integrated sensing systems and is compared with pyroelectric IR sensors using MgO substrates.
Keywords :
epitaxial layers; infrared detectors; pyroelectric detectors; substrates; thin films; 100 Hz; 20 Hz; 50 Hz; Al2O3-Si; IR sensor; PZT thin films; Pb(ZrTi)O3; epitaxial films; epitaxial substrates; pyroelectric infrared sensors; response time; sensitivity; Biosensors; Delay; Infrared image sensors; Infrared sensors; Pyroelectricity; Semiconductor films; Substrates; Temperature sensors; Thermal sensors; Thin film sensors;
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05. The 13th International Conference on
Print_ISBN :
0-7803-8994-8
DOI :
10.1109/SENSOR.2005.1496418
