A plasma purification method for plasma source ion implantation doping of semiconductors

Summary form only given. Using plasma source ion implantation (PSII) to create the shallow source and drain structures required for next generation devices may be a necessity. For example, future devices are predicted to require heavy metal doses be kept less than 3/spl times/10/sup 9/ atoms per square centimeter. Plasma purification is done using ion cyclotron resonance to selectively expel unwanted ions from the plasma where they are neutralized upon collision with the chamber wall and no longer an implantation hazard. With a computer simulation we determine the necessary field strengths and uniformity for plasma purification, cleaning efficiency and frequency/mass resolution of the method.