Title :
Development of drift-strip detectors based on CdZnTe
Author :
Gostilo, V. ; Budtz-Jorgensen, C. ; Kuvvetli, I. ; Gryaznov, D. ; Lisjutin, I. ; Loupilov, A.
Author_Institution :
Baltic Sci. Instruments, Riga, Latvia
fDate :
6/23/1905 12:00:00 AM
Abstract :
The development results of drift-strip detectors on the basis of CdZnTe crystals of dimensions 10×10×3 mm3 are presented. The pitch of the structure was 200 μm, the strips width -100 μm, the inter-strip gaps -100 μm, the length of strips is 9.5 mm. Design and technological aspects of the development of drift strip detectors are described. The distribution histograms for leakage currents of strips as well as distribution of interstrip resistance by the numbers of strips on various detectors are presented. Energy resolution at energies 59.5 and 661 keV was 1.9 and 12 keV correspondingly. Energy resolution at high energies was limited by the transport characteristics of the charge carriers
Keywords :
II-VI semiconductors; cadmium compounds; leakage currents; semiconductor counters; wide band gap semiconductors; CdZnTe; CdZnTe crystals; charge carriers; drift-strip detectors; energy resolution; interstrip resistance; leakage currents; transport characteristics; Crystals; Detectors; Electrodes; Electron traps; Energy resolution; Histograms; Space technology; Spectroscopy; Strips; Voltage;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2001 IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-7324-3
DOI :
10.1109/NSSMIC.2001.1009278
