Development of drift-strip detectors based on CdZnTe

Author

Gostilo, V. ; Budtz-Jorgensen, C. ; Kuvvetli, I. ; Gryaznov, D. ; Lisjutin, I. ; Loupilov, A.

Author_Institution

Baltic Sci. Instruments, Riga, Latvia

Volume

4

fYear

2001

fDate

6/23/1905 12:00:00 AM

Firstpage

2281

Lastpage

2285

Abstract

The development results of drift-strip detectors on the basis of CdZnTe crystals of dimensions 10×10×3 mm³ are presented. The pitch of the structure was 200 μm, the strips width -100 μm, the inter-strip gaps -100 μm, the length of strips is 9.5 mm. Design and technological aspects of the development of drift strip detectors are described. The distribution histograms for leakage currents of strips as well as distribution of interstrip resistance by the numbers of strips on various detectors are presented. Energy resolution at energies 59.5 and 661 keV was 1.9 and 12 keV correspondingly. Energy resolution at high energies was limited by the transport characteristics of the charge carriers

Keywords

II-VI semiconductors; cadmium compounds; leakage currents; semiconductor counters; wide band gap semiconductors; CdZnTe; CdZnTe crystals; charge carriers; drift-strip detectors; energy resolution; interstrip resistance; leakage currents; transport characteristics; Crystals; Detectors; Electrodes; Electron traps; Energy resolution; Histograms; Space technology; Spectroscopy; Strips; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium Conference Record, 2001 IEEE

Conference_Location

San Diego, CA

ISSN

1082-3654

Print_ISBN

0-7803-7324-3

Type

conf

DOI

10.1109/NSSMIC.2001.1009278

Filename

1009278