Title :
Fabrication of nano-gap accelerometer using photo-assisted electrochemical etching
Author :
Kim, Hveon Cheol ; Kim, Dae Hyun ; Jeong, Jinwoo ; Chun, Kukjin
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ., South Korea
Abstract :
We propose a novel fabrication method for implementing a high precision capacitive type microaccelerometer with uniform nanometer scale gap and have fabricated a nano-gap accelerometer with 135 nm gap and high aspect ratio (>60:1) using modified photo-assisted electrochemical etching. The characteristics of the etching were observed according to the DC bias, the light intensity, and the pitch. After obtaining the optimum etching conditions, the accelerometer with 135 nm sensing gap was designed and fabricated using a 4 masks process.
Keywords :
accelerometers; capacitive sensors; electrochemical machining; etching; micromachining; microsensors; nanotechnology; 135 nm; 4 masks process; DC bias; MEMS sensors; capacitive microaccelerometer; capacitive sensors; high aspect ratio; high precision microaccelerometer; light intensity; nano-gap accelerometer fabrication; photo-assisted electrochemical etching; uniform nanometer scale gap; Accelerometers; Anisotropic magnetoresistance; Computer science; Dry etching; Fabrication; Hafnium; Mechanical systems; Micromechanical devices; Silicon; Wet etching;
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05. The 13th International Conference on
Print_ISBN :
0-7803-8994-8
DOI :
10.1109/SENSOR.2005.1496469
