• DocumentCode
    1719772
  • Title

    Electron trapping variations in single-crystal pixelated HgI2 gamma-ray spectrometers

  • Author

    Baciak, J.E. ; He, Z. ; DeVito, R.P.

  • Author_Institution
    Dept. of Nucl. Eng. & Radiol. Sci., Michigan Univ., Ann Arbor, MI, USA
  • Volume
    4
  • fYear
    2001
  • fDate
    6/23/1905 12:00:00 AM
  • Firstpage
    2335
  • Lastpage
    2339
  • Abstract
    The characteristics of thick (>5 mm) HgI2 room temperature gamma-ray detectors having 4 small pixel anodes are investigated. Spectra for the different anodes (overall and for individual interaction depths) are presented. The mu-tau product for electrons was measured to study the variations of electron transport within a single HgI2 crystal. By using single polarity charge sensing with depth sensing, the μeτe was estimated to vary from ~9×10-4 cm2/V to 7×10-3 cm2/V. Individual pixels have the ability to produce spectra with resolutions less than 3% at 662 keV. Some effects of electron detrapping and hole transport are also discussed
  • Keywords
    electron traps; gamma-ray spectrometers; hole mobility; semiconductor counters; 662 keV; HgI2; HgI2 gamma-ray spectrometers; electron transport; electron trapping; hole transport; mu-tau product; pixels; room temperature gamma-ray detectors; Anodes; Cathodes; Charge carrier processes; Crystalline materials; Detectors; Electron traps; Pulse amplifiers; Pulse shaping methods; Spectroscopy; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nuclear Science Symposium Conference Record, 2001 IEEE
  • Conference_Location
    San Diego, CA
  • ISSN
    1082-3654
  • Print_ISBN
    0-7803-7324-3
  • Type

    conf

  • DOI
    10.1109/NSSMIC.2001.1009290
  • Filename
    1009290
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1719772