Title :
MOS only simulated grounded negative resistors
Author :
Sunca, Abdullah ; Cicekoglu, Oguzhan ; Dundar, Gunhan
Author_Institution :
Dept. of Electr. & Electron. Eng´´g., Bogazici Univ., Istanbul, Turkey
Abstract :
In this paper, a number of tunable grounded negative resistor circuits are presented. These new negative resistors exhibit important features such as simplicity, independent tunability and wide frequency range. One of the introduced negative resistor circuits is simulated using TSMC 0.18 μm process parameters and compared to a couple of other negative resistors in the literature.
Keywords :
MIS devices; resistors; MOS; TSMC 0.18 μm process; simulated grounded negative resistors; size 0.18 mum; tunability; tunable grounded negative resistor circuits; Band pass filters; CMOS integrated circuits; Impedance; Resistance; Resistors; Tunneling; MOS; active resistor; negative resistor; resistance simulation; tunable resistor;
Conference_Titel :
Telecommunications and Signal Processing (TSP), 2011 34th International Conference on
Conference_Location :
Budapest
Print_ISBN :
978-1-4577-1410-8
DOI :
10.1109/TSP.2011.6043715
