Development of double-sided microstructured Si(Li)-detectors

A new technique for manufacturing double-sided structured Si(Li)-detectors has been established. The position-sensitive structure on the implanted p⁺-contact can be realized, even finer than 100 μm, by means of photolithography and plasma-etching of grooves, which then separate the position elements. By modifying this technique position-sensitive structures on thin (~30 pm) Li-diffused contact were performed. Areas of 50 mm ×50 nm were divided into 50 or 100 strips with a pitch of 1 mm or 500 μm respectively. The strips were separated by ~35 μm deep and ~50 μm wide grooves. Measurement of electrical resistance of the grooves and the reverse current of the strips are presented. Charge splitting on the adjacent strips shows practically no charge loss through the groove. Small pixel effects are demonstrated on a Li-diffused contact (100 strips with the pitch of 500 μm) and on the first double-sided Si(Li)-detector (50×50 strips with the pitch of 1 mm). The capability of 3D-imaging for such detectors is proven