Title :
Breakdown Voltage Analysis of SOI LDMOS with Step Buried Oxide
Author :
Tao, An ; Yong, Gao
Author_Institution :
Xi´´an Univ. of Technol., Xi´´an
Abstract :
On the basis of analyzing SOI LDMOS structure with step buried oxide, the modulation effect of SOI LDMOS step buried field plate on surface electric field of drift region is analyzed, according to modulation theory of field plate on surface electric field. Besides, the effects of step buried oxide thickness and step number on breakdown voltage are also simulated and optimized by ISE. When buried oxide step number is 3 and step thickness is in the range of 0.8 mum -1.2 mum , surface electric field distribution is nearly uniform, breakdown point moves into body form surface, and breakdown voltage of SBOSOI is improved by 30%, compared to conventional SOI device, which provides a practical application conclusion for the design of SOI LDMOS device.
Keywords :
MOS integrated circuits; buried layers; electric fields; semiconductor device breakdown; silicon-on-insulator; SOI LDMOS; breakdown point; breakdown voltage analysis; drift region; modulation effect; size 0.8 mum to 1.2 mum; step buried oxide; surface electric field; Breakdown voltage; Dielectrics and electrical insulation; Electric variables measurement; Energy consumption; Etching; Instruments; Latches; Microelectronics; Silicon on insulator technology; Soil measurements; Breakdown Voltage; SOI; electric field modulation; step buried oxide;
Conference_Titel :
Electronic Measurement and Instruments, 2007. ICEMI '07. 8th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4244-1136-8
Electronic_ISBN :
978-1-4244-1136-8
DOI :
10.1109/ICEMI.2007.4350551
