Title :
Parameter extraction method for the Pspice model of the PT- and NPT-IGBT´s by electrical measurements
Author :
Cotorogea, M. ; Claudio, A. ; Rodriguez, M.A.
Author_Institution :
Interior Internado Palmira, Centro Nacional de Investigacion y Desarrollo Tecnologico (CENIDET), Morelos, Mexico
Abstract :
The IGBT is the most interesting power semiconductor device for many power applications, due to its characteristics having a good compromise between on-state loss, switching loss, and ease of use since most of the circuits and systems use these kind of devices, models are needed for use in circuit simulators. This paper presents a procedure for extracting the most important parameters to be used in IGBT models with physical background by electrical measurements. The parameter extraction consists of 6 test circuits and 6 algorithms that extract 13 physical and structural parameters needed in most physics-based IGBT models.
Keywords :
SPICE; electric variables measurement; insulated gate bipolar transistors; losses; semiconductor device models; IGBT models; NPT-IGBT; PT-IGBT; Pspice model; circuit simulators; electrical measurements; on-state loss; parameter extraction method; power semiconductor device; structural parameters; switching loss; test circuits; Circuit simulation; Circuit testing; Circuits and systems; Electric variables measurement; Insulated gate bipolar transistors; Parameter extraction; Power semiconductor devices; Power system modeling; Structural engineering; Switching loss;
Conference_Titel :
Power Electronics Congress, 2002. Technical Proceedings. CIEP 2002. VIII IEEE International
Print_ISBN :
0-7803-7640-4
DOI :
10.1109/CIEP.2002.1216644
