Microplasma and uniform MESFET gate breakdown

Author

Vashchenko, V.A. ; Martynov, Y.B. ; Sinkevitch, V.F.

Volume

2

fYear

1997

Firstpage

497

Abstract

On the basis of 2-D numerical simulation the mechanism of “microplasma” and “uniform” gate-drain breakdown in the GaAs MESFET´s is studied. It is stated that when the MESFET design provides the negative differential conductivity of the part of channel between the gate and the drain recess edge the avalanche current distribution is unstable and microplasma, as a solitary avalanche current filament, is exited at some critical avalanche current. The universal mechanism of microplasma breakdown in semiconductor structures is suggested

Keywords

III-V semiconductors; Schottky gate field effect transistors; avalanche breakdown; current distribution; gallium arsenide; negative resistance; semiconductor device models; semiconductor plasma; 2D numerical simulation; GaAs; GaAs MESFET; avalanche current distribution instability; avalanche current filament; critical avalanche current; microplasma breakdown; microplasma mechanism; negative differential conductivity; semiconductor structures; uniform gate-drain breakdown; Avalanche breakdown; Breakdown voltage; Conductivity; Current distribution; Electric breakdown; Gallium arsenide; Hysteresis; MESFETs; P-n junctions; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 1997. Proceedings., 1997 21st International Conference on

Conference_Location

Nis

Print_ISBN

0-7803-3664-X

Type

conf

DOI

10.1109/ICMEL.1997.632887

Filename

632887