Title :
High-frequency dielectric measurements on TlGaS2 single crystals
Author :
Mustafaeva, S.N.
Author_Institution :
Inst. of Phys., Azerbaijan Nat. Acad. of Sci., Baku, Azerbaijan
Abstract :
Evidence is reported for hopping conduction along C-axis of layer TIGaS2 single crystals at 5·104-106 Hz. The ac-conductivity at room temperature follows the theoretical formula of Pollak up to frequencies of 106 Hz. Density of localized states near the Fermi level NF = 2.1·1018 eV-1cm-3 and hopping distance R = 103 Å were determined from experimental results. Dielectric permittivity of TlGaS2 is found to be from 26 to 30 in frequency range 5·104-3·107 Hz.
Keywords :
Fermi level; electronic density of states; gallium compounds; high-frequency effects; hopping conduction; permittivity; ternary semiconductors; 20 degC; 5E4 to 3E7 Hz; Fermi level; Pollak theoretical formula; TlGaS2; ac-conductivity; density of localized states; dielectric permittivity; high-frequency dielectric measurements; hopping conduction; hopping distance; room temperature; single crystals; Crystallization; Crystals; Dielectric loss measurement; Dielectric losses; Dielectric measurements; Equations; Frequency; Noise measurement; Permittivity; Physics;
Conference_Titel :
Solid Dielectrics, 2004. ICSD 2004. Proceedings of the 2004 IEEE International Conference on
Print_ISBN :
0-7803-8348-6
DOI :
10.1109/ICSD.2004.1350285
