Title :
Fluorocarbon reinforcement of a self-assembled monolayer by plasma processing
Author :
Crain, Mark M. ; Harfenist, Steven A. ; Walsh, Kevin M. ; Cohn, R.W.
Author_Institution :
Dept. of Electr. & Comput. Eng., Louisville Univ., KY, USA
fDate :
6/23/1905 12:00:00 AM
Abstract :
A dry plasma fluorocarbon process is reported that selectively modifies a self-assembled monolayer (SAM) and increases the SAM resistance to wet etchants such as potassium iodide-iodine. Selective formation of the fluorocarbon film on the SAM expands the use of the SAM for defining a masking layer, insulator, or foundation for additional layers. This dry plasma process has the potential to produce high quality masking layers of uniform film thickness and with fewer observed pinholes
Keywords :
etching; masks; micromachining; monolayers; plasma materials processing; self-assembly; surface treatment; SAM wet etch resistance; dry plasma fluorocarbon process; dry plasma process; fluorocarbon reinforcement; foundation layers; insulator layer; masking layer; masking layers; microfabrication; pinholes; plasma processing; potassium iodide-iodine etchants; selective fluorocarbon film formation; selective modification; self-assembled monolayer; soft lithography; uniform film thickness; Chemical processes; Coatings; Etching; Gold; Plasma applications; Plasma chemistry; Plasma materials processing; Resists; Silicon compounds; Substrates;
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 2001. Proceedings of the Fourteenth Biennial
Conference_Location :
Richmond, VA
Print_ISBN :
0-7803-6691-3
DOI :
10.1109/UGIM.2001.960291
