Title :
Two-dimensional modeling of on state voltage drop in IGBT
Author :
Napoli, Ettore ; Strollo, Antonio G M ; Spirito, Paolo
Author_Institution :
Dept. of Electron. Eng., Napoli Univ., Italy
Abstract :
In this paper a two-dimensional analysis of the on-state voltage drop for an IGBT, investigating the influence of the geometrical parameters of the device on current handling capabilities, is presented. Numerical simulations show that an optimal ratio between the cell dimension and the width of the epilayer region under the gate electrode exists. Furthermore, an analytical algorithm for the calculation of the two-dimensional carrier distribution in the epilayer region is proposed
Keywords :
insulated gate bipolar transistors; power transistors; semiconductor device models; 2D carrier distribution; IGBT; cell dimension; current handling capabilities; epilayer region width; geometrical parameters; numerical simulation; on state voltage drop; two-dimensional modeling; Algorithm design and analysis; Analytical models; Electrodes; Insulated gate bipolar transistors; Medical simulation; Numerical simulation; Steady-state; Switching frequency; Tail; Voltage;
Conference_Titel :
Microelectronics, 1997. Proceedings., 1997 21st International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-3664-X
DOI :
10.1109/ICMEL.1997.632889
