Development of monolithic PZT microstage for the application of ultra high-density data storage

Author

Xu, E.G. ; Okamoto, K. ; Zhang, D.Y. ; Ono, T. ; Esashi, M.

Author_Institution

Dept. of Nanomechanics, Tohoku Univ., Sendai, Japan

Volume

1

fYear

2005

Firstpage

717

Abstract

The paper presents the fabrication and characterizations of a compact PZT actuated microstage with multi degrees of freedom (DOFs). The entire device is fabricated in a symmetrical arrangement from a monolithic PZT plate of size 15×15×0.8 mm³. Displacement amplification mechanisms are integrated in the structure to increase the stroke of the PZT actuator. The performances of the displacement and the resonant frequencies are simulated using a finite element method (FEM). Simulation results show the possibility of achieving a displacement of 8 μm in x- and y-axes and 10 μm in z-axis under the applied voltage of 100 V. A prototype has been fabricated and evaluated. The FEM simulation and experimental results are compared.

Keywords

atomic force microscopy; digital storage; finite element analysis; microactuators; micromachining; 0.8 mm; 10 micron; 100 V; 15 mm; 8 micron; AFM-based data storage; FEM; PZT; PZT actuator; PbZrO3TiO3; displacement amplification mechanisms; finite element method; monolithic PZT microstage; multi degrees of freedom; reading/writing cantilever array; resonant frequencies; ultra high-density data storage; Atomic force microscopy; Electrostatic actuators; Fabrication; Mechanical engineering; Memory; National electric code; Piezoelectric actuators; Resonant frequency; Textile industry; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05. The 13th International Conference on

Print_ISBN

0-7803-8994-8

Type

conf

DOI

10.1109/SENSOR.2005.1496517

Filename

1496517