DocumentCode :
1720896
Title :
A self-limited large-displacement-ratio micromechanical amplifier
Author :
Li, J. ; Liu, Z.S. ; Lu, C. ; Zhang, X. ; Liu, A.Q.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
Volume :
1
fYear :
2005
Firstpage :
725
Abstract :
A micromechanical amplifier, with large-displacement-ratio and self-limited output as a result of the bifurcation effect, is reported. The large output displacement is achieved by amplifying a small input motion through elastic deformation of the compliant configuration, which realizes the self-limited output by the bifurcation effect. The configuration of the compliant microstructures is analyzed with the result of as high as 100 times displacement magnification and self-limitation by the bifurcation effect. Such an amplifier is fabricated by employing the deep reactive ion etching (DRIE) process. It demonstrates a 52.0-μm-output displacement when the input displacement is only 0.96 μm, with a displacement ratio of 54.2. Thereafter, the output displacement remains stable due to the bifurcation effect.
Keywords :
bifurcation; micromachining; micromechanical devices; sputter etching; 0.96 micron; 52.0 micron; bifurcation effect; compliant configuration; compliant microstructure configuration; deep reactive ion etching; displacement magnification; displacement ratio; elastic deformation; micromachined actuator; self-limited large-displacement-ratio micromechanical amplifier; Actuators; Bifurcation; Etching; Fabrication; High performance computing; Microelectromechanical systems; Microelectronics; Micromechanical devices; Microstructure; Piezoelectric materials;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05. The 13th International Conference on
Print_ISBN :
0-7803-8994-8
Type :
conf
DOI :
10.1109/SENSOR.2005.1496519
Filename :
1496519
Link To Document :
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