An advanced PNP bipolar transistor design for low-power and very-high-performance quarter-micron CBiCMOS process

Author

Djezzar, Boualem ; Belaroussi, M.T.

Volume

2

fYear

1997

Firstpage

509

Abstract

A PNP bipolar transistor was designed and optimized for low-power and very-high-speed 0.25 μm CBiCMOS technology by using a two-dimensional device/circuit simulator (CODECS), and based on the 0.25 μm PNP process and on technological parameters of 0.25 μm BiCMOS, a current gain of 17 (without poly-Si emitter effect) and the maximum cut-off frequency of 14 GHz are achieved. The simulated results of a complementary BiCMOS inverter gate show superior drive capability of 0.25 μm and 2.5 V CBiCMOS technology compared to 0.25 μm BiCMOS and CMOS technologies

Keywords

BiCMOS digital integrated circuits; bipolar transistors; integrated circuit design; integrated circuit technology; logic gates; very high speed integrated circuits; 0.25 micron; 14 GHz; 2.5 V; 2D device/circuit simulator; CODECS; PNP bipolar transistor design; complementary BiCMOS technology; drive capability; inverter gate; low-power operation; quarter-micron CBiCMOS process; very-high-speed operation; BiCMOS integrated circuits; Bipolar transistors; Boron; CMOS technology; Chemical technology; Codecs; Cutoff frequency; Doping; Inverters; Power supplies;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 1997. Proceedings., 1997 21st International Conference on

Conference_Location

Nis

Print_ISBN

0-7803-3664-X

Type

conf

DOI

10.1109/ICMEL.1997.632890

Filename

632890