Title :
Characterization of semiconducting glaze by dielectric spectroscopy in frequency domain
Author :
Ullrich, H. ; Gubanski, Stanislaw
Author_Institution :
Dept. of Electr. Power Eng., Chalmers Univ. of Technol., Gothenburg, Sweden
Abstract :
A study on the dielectric response in frequency domain of a semiconducting glaze is presented. By modifying the electrical contacts to the glaze it was found that the observed polarization relaxation as well as the non-linear voltage dependence of the dc conductance arises due to a low-conductive barrier controlling conduction through the glaze. Structural and chemical analysis using scanning electron microscopy revealed that the outermost layer of the glaze mainly consisted of glass, containing very few tin oxide particles. With an equivalent circuit model, the thickness of the glassy layer was estimated to be about 4 μm, while its resistivity was found to be in the order of 108Ωm to 109Ωm.
Keywords :
IV-VI semiconductors; chemical analysis; dielectric polarisation; dielectric relaxation; electrical contacts; electrical resistivity; glass; scanning electron microscopy; 108 to 109 ohmm; 4 micron; SnO2; chemical analysis; circuit model; dc conductance; dielectric response; dielectric spectroscopy; electrical contacts; frequency domain; glass; glassy layer; low-conductive barrier; nonlinear voltage dependence; polarization relaxation; resistivity; scanning electron microscopy; semiconducting glaze; structural analysis; tin oxide particles; Chemical analysis; Contacts; Dielectrics; Electrochemical impedance spectroscopy; Electrons; Frequency domain analysis; Glazes; Optical polarization; Semiconductivity; Voltage control;
Conference_Titel :
Solid Dielectrics, 2004. ICSD 2004. Proceedings of the 2004 IEEE International Conference on
Print_ISBN :
0-7803-8348-6
DOI :
10.1109/ICSD.2004.1350305
