New technique of temperature noncontact measurements: application to thermal characterization of GTO thyristors in commutation

Author

Abid, Ridha ; Mezroua, Fatima-Zohra

Author_Institution

Conservatoire Nat. des Arts et Metiers, Paris, France

Volume

1

fYear

1995

Firstpage

586

Abstract

A noncontact technique of temperature measurement is presented. It is based on thermoreflectivity of oxidized silicon and is dedicated to thermal characterization of power electron devices. The size of the optical probe is 20 μm and the temperature resolution is 10°C. The study of the temperature variation versus the energy dissipated during turn-off is performed on the surface of the gate-cathode junction in a 1200 V GTO thyristor

Keywords

cathodes; optical sensors; p-n junctions; temperature measurement; thermoreflectance; thyristor applications; 1200 V; 20 mum; GTO thyristors; Si; commutation; energy dissipation; gate-cathode junction surface; noncontact temperature measurements; optical probe; oxidized silicon; power electron devices; temperature resolution; thermal characterization; thermoreflectivity; turn-off; Area measurement; Electron devices; Liquid crystals; Optical sensors; Photodiodes; Reflectivity; Silicon; Temperature measurement; Thermoreflectance; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Computer Engineering, 1995. Canadian Conference on

Conference_Location

Montreal, Que.

ISSN

0840-7789

Print_ISBN

0-7803-2766-7

Type

conf

DOI

10.1109/CCECE.1995.528205

Filename

528205