Title :
New technique of temperature noncontact measurements: application to thermal characterization of GTO thyristors in commutation
Author :
Abid, Ridha ; Mezroua, Fatima-Zohra
Author_Institution :
Conservatoire Nat. des Arts et Metiers, Paris, France
Abstract :
A noncontact technique of temperature measurement is presented. It is based on thermoreflectivity of oxidized silicon and is dedicated to thermal characterization of power electron devices. The size of the optical probe is 20 μm and the temperature resolution is 10°C. The study of the temperature variation versus the energy dissipated during turn-off is performed on the surface of the gate-cathode junction in a 1200 V GTO thyristor
Keywords :
cathodes; optical sensors; p-n junctions; temperature measurement; thermoreflectance; thyristor applications; 1200 V; 20 mum; GTO thyristors; Si; commutation; energy dissipation; gate-cathode junction surface; noncontact temperature measurements; optical probe; oxidized silicon; power electron devices; temperature resolution; thermal characterization; thermoreflectivity; turn-off; Area measurement; Electron devices; Liquid crystals; Optical sensors; Photodiodes; Reflectivity; Silicon; Temperature measurement; Thermoreflectance; Thyristors;
Conference_Titel :
Electrical and Computer Engineering, 1995. Canadian Conference on
Conference_Location :
Montreal, Que.
Print_ISBN :
0-7803-2766-7
DOI :
10.1109/CCECE.1995.528205
