• DocumentCode
    172118
  • Title

    Study on the electrical and physical characteristics of ZnO varistor according to the sintering temperature

  • Author

    Sung-Man Kang ; Jae-Bok Lee ; Seung-Kyu Choi ; Mun-No Ju ; Ho-dong Kim ; Jun-Young Jung ; Shenderey, S.V. ; Hyun-Hak Jung ; Kyong-Jin Jung

  • Author_Institution
    Korea Electrotechnol. Res. Inst., Changwon, South Korea
  • fYear
    2014
  • fDate
    11-18 Oct. 2014
  • Firstpage
    1143
  • Lastpage
    1146
  • Abstract
    This study investigates the electrical and physical characteristics of ZnO varistor according to the sintering temperature range from 600 °C to 1300 °C. Specimens are prepared with bismuth, antimony and other metal oxides. The composition of ZnO varistor is fixed only one batch. And the microstructure of varistor samples is observed by a FE-SEM & EDS. according to the maximum sintering temperature, the microstructure of ZnO varistors is changed involving both electrical and thermal property changes. Namely, the specimen which has sintering temperature range from 950 °C to 1150 °C shows better electrical and thermal properties than the others. Furthermore, Dielectric constant and nonlinear coefficients are strongly influenced by maximum densification temperature.
  • Keywords
    II-VI semiconductors; X-ray chemical analysis; scanning electron microscopy; sintering; varistors; wide band gap semiconductors; zinc compounds; EDS; FE-SEM; ZnO; dielectric constant; electrical characteristics; electrical property; metal oxides; nonlinear coefficients; physical characteristics; sintering temperature; temperature 600 degC to 1300 degC; thermal property; varistor sample microstructure; Atmospheric measurements; Lightning; Particle measurements; Printing; Switches; Temperature measurement; Zinc oxide; Microstructure; Sintering temperature; Thermal conductivity; ZnO varistor;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lightning Protection (ICLP), 2014 International Conference o
  • Conference_Location
    Shanghai
  • Type

    conf

  • DOI
    10.1109/ICLP.2014.6973298
  • Filename
    6973298