DocumentCode
1721239
Title
Calculation of threshold current density in 633-nm AlGaInP/GaInP strained quantum well lasers
Author
Domen, K. ; Ishikawa, H. ; Sugawara, M. ; Kondo, M. ; Furuya, A. ; Tanahashi, T.
Author_Institution
Fujitsu Laboratores Ltd.
fYear
1994
fDate
6/16/1905 12:00:00 AM
Firstpage
15
Lastpage
16
Keywords
Capacitive sensors; Current density; Effective mass; Laser theory; Optical mixing; Optical saturation; Quantum mechanics; Quantum well lasers; Tensile strain; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 1994. 52nd Annual
Type
conf
DOI
10.1109/DRC.1994.1009396
Filename
1009396
Link To Document