Meniscus interface etching of silicon in KOH in a hands-on introductory course in MEMS

Author

Schultz, J. ; Ivanov, D.V. ; Farmer, K.R.

Author_Institution

Microelectron. Res. Center, New Jersey Inst. of Technol., Newark, NJ, USA

fYear

2001

fDate

6/23/1905 12:00:00 AM

Firstpage

153

Lastpage

157

Abstract

We describe a bulk micromachining technique for etching one side of a silicon wafer in KOH without the need for substantial protection of features on the opposite side. The approach uses meniscus properties of the etchant to draw fluid to the surface of a wafer that is suspended above the bath. Complete etching through the wafer is possible. This technique has been developed as part of a new course in MEMS that is also briefly described

Keywords

educational courses; electronic engineering education; elemental semiconductors; etching; micromachining; micromechanical devices; potassium compounds; silicon; KOH; KOH etchant; MEMS; MEMS introductory course; Si; bulk micromachining technique; etchant meniscus properties; etching; etching bath; feature protection; meniscus interface etching; silicon; silicon wafer; suspended wafer surface; Accelerometers; Etching; Fabrication; Microelectromechanical devices; Micromachining; Micromechanical devices; Packaging; Sensor phenomena and characterization; Silicon; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

University/Government/Industry Microelectronics Symposium, 2001. Proceedings of the Fourteenth Biennial

Conference_Location

Richmond, VA

ISSN

0749-6877

Print_ISBN

0-7803-6691-3

Type

conf

DOI

10.1109/UGIM.2001.960319

Filename

960319