• DocumentCode
    1721292
  • Title

    NMOS digital integrated circuits in 6h silicon carbide

  • Author

    Xie, Weize ; Cooper, James A., Jr. ; Melloch, M.R.

  • Author_Institution
    Purdue University
  • fYear
    1994
  • fDate
    6/16/1905 12:00:00 AM
  • Firstpage
    23
  • Lastpage
    24
  • Keywords
    Annealing; Argon; Digital integrated circuits; MOS devices; MOSFETs; Ohmic contacts; Pulse inverters; Semiconductor materials; Silicon carbide; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 1994. 52nd Annual
  • Type

    conf

  • DOI
    10.1109/DRC.1994.1009399
  • Filename
    1009399
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1721292