MMIC 1 watt wideband power amplifier chip set using pHEMT technology for 20/30 GHz communication systems

Author

Lim, Jong-Sik ; Kang, Sung-Choon ; Nam, Sangwaok

Author_Institution

Appl. Electromagn. Lab., Seoul Nat. Univ., South Korea

Volume

2

fYear

1999

fDate

11/1/1999 12:00:00 AM

Firstpage

425

Abstract

High power MMIC wideband power amplifiers for 20/30 GHz systems have been developed using the 0.15 μm InGaAs-AlGaAs-GaAs pHEMT technology. These two MMIC 1 watt power amplifiers were fabricated on a 4-mil GaAs wafer. Both MMIC power amplifiers showed 12~15 dB of linear gain and 30 dBm of output power with more than 20% power-added efficiency over their wide operating frequency bands. Due to the wideband operation with excellent stability and high power, their application can be extended to any kind of 20/30 GHz communications system including the satellite communication, local multipoint distribution service, and so on

Keywords

HEMT integrated circuits; MMIC power amplifiers; field effect MMIC; integrated circuit design; microwave links; power integrated circuits; wideband amplifiers; 0.15 micron; 1 W; 12 to 15 dB; 20 GHz; 20 percent; 30 GHz; InGaAs-AlGaAs-GaAs; MMIC wideband power amplifiers; PHEMT technology; high power MMIC amplifiers; local multipoint distribution service; satellite communication; stability; wideband power amplifier chip set; Broadband amplifiers; Frequency; Gain; Gallium arsenide; High power amplifiers; MMICs; PHEMTs; Power amplifiers; Power generation; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 1999 Asia Pacific

Print_ISBN

0-7803-5761-2

Type

conf

DOI

10.1109/APMC.1999.829895

Filename

829895