DocumentCode
1721348
Title
4H-silicon carbide mesfet with 2.8 W/mm rf power density
Author
Palmour, J.W. ; Weitzel, C.E. ; Nordquist, K.J. ; Carter, C.H.
Author_Institution
Cree- Research Inc.
fYear
1994
fDate
6/16/1905 12:00:00 AM
Firstpage
27
Lastpage
28
Keywords
Breakdown voltage; Cutoff frequency; Doping; Electron mobility; MESFETs; Power generation; Radio frequency; Scattering parameters; Silicon carbide; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 1994. 52nd Annual
Type
conf
DOI
10.1109/DRC.1994.1009401
Filename
1009401
Link To Document