DocumentCode :
1721390
Title :
Three-dimensional RF amplifier using mixed technologies
Author :
Yeoh, Woai Can ; Lin, Fujimg ; Karunasiri, G.
Author_Institution :
Inst. of Microelectron., Singapore
Volume :
2
fYear :
1999
fDate :
11/1/1999 12:00:00 AM
Firstpage :
433
Abstract :
This paper describes the realization of novel three-dimensional radio frequency amplifiers using mixed technologies. Bare die of high-performance technologies are flip-attached on MCM substrate of either Silicon or Ceramic-based. In this approach, performance can be maximized while cost is minimized. In addition, most matching circuits can be realized or mounted on MCM substrate. Furthermore, customized flexible bare die can be pre-fabricated and designed or matched for different operating frequencies. Two RF amplifiers will be presented. Both were realized using the same bare die but were matched and operated at different frequencies
Keywords :
flip-chip devices; multichip modules; radiofrequency amplifiers; MCM; Si; bare die; ceramic substrate; flip-chip; matching circuit; mixed technology; silicon substrate; three-dimensional RF amplifier; Costs; Gallium arsenide; Integrated circuit technology; MMICs; Radio frequency; Radiofrequency amplifiers; Radiofrequency integrated circuits; Silicon; Space technology; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1999 Asia Pacific
Print_ISBN :
0-7803-5761-2
Type :
conf
DOI :
10.1109/APMC.1999.829898
Filename :
829898
Link To Document :
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