• DocumentCode
    1721466
  • Title

    Minority carrier transport parameters in n-Si/p+-Si1-xGex/n-Si HBTs using A.C. and D.C. measurements

  • Author

    Ghani, T. ; Hoyt, J.L. ; Weybright, M.E. ; Gibbons, J.F.

  • Author_Institution
    Solid State Electronics Laboratory
  • fYear
    1994
  • fDate
    6/16/1905 12:00:00 AM
  • Firstpage
    39
  • Lastpage
    40
  • Keywords
    Current measurement; Doping; Electrons; Heterojunction bipolar transistors; Photonic band gap; Silicon; Solid state circuits; Statistics; Temperature dependence; Time measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 1994. 52nd Annual
  • Type

    conf

  • DOI
    10.1109/DRC.1994.1009406
  • Filename
    1009406
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1721466