DocumentCode
1721473
Title
Microwave monolithic selective tunable amplifiers using space-charge waves in the GaAs films
Author
Kogan, Alex
fYear
2001
fDate
6/23/1905 12:00:00 AM
Firstpage
190
Lastpage
192
Abstract
A new kind of IC based on space-charge waves at GaAs films is considered. The devices combine functions of microwave/millimeter range complex signal formers and optimal receivers. The unique property of the devices is their capability to work at the carrier frequency, particularly directly at the microwave receiver input, protecting the whole system from jamming
Keywords
III-V semiconductors; MMIC amplifiers; circuit tuning; gallium arsenide; microwave receivers; millimetre wave amplifiers; millimetre wave receivers; space charge waves; GaAs; GaAs IC; GaAs films; carrier frequency operation; microwave monolithic selective tunable amplifiers; microwave range complex signal formers; microwave receiver input; millimeter range complex signal formers; optimal receivers; space-charge waves; system jamming; Dielectric constant; Differential equations; Electron mobility; Frequency; Gallium arsenide; Microwave amplifiers; Microwave devices; Millimeter wave devices; Semiconductor films; Surface waves;
fLanguage
English
Publisher
ieee
Conference_Titel
University/Government/Industry Microelectronics Symposium, 2001. Proceedings of the Fourteenth Biennial
Conference_Location
Richmond, VA
ISSN
0749-6877
Print_ISBN
0-7803-6691-3
Type
conf
DOI
10.1109/UGIM.2001.960327
Filename
960327
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