DocumentCode
1721496
Title
90 GHz f max SiGe-HBTs
Author
Schuppen, A. ; Gruhle, A. ; Erben, U. ; Kibbel, H. ; König, U.
Author_Institution
Daimler Benz AG
fYear
1994
fDate
6/16/1905 12:00:00 AM
Firstpage
41
Lastpage
42
Keywords
Boron; Circuits; Doping; Electrical resistance measurement; Electron devices; Frequency; Germanium silicon alloys; Plasma measurements; Plasma temperature; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 1994. 52nd Annual
Type
conf
DOI
10.1109/DRC.1994.1009407
Filename
1009407
Link To Document