• DocumentCode
    1721517
  • Title

    Near-ideal breakdown Si/SiGe heterojunction bipolar transistors for microwave power

  • Author

    Hobart, K.D. ; Kub, F.J. ; Papanicolaou, N.A. ; Kruppa, W. ; Thompson, P.E.

  • Author_Institution
    SFA, Inc.
  • fYear
    1994
  • fDate
    6/16/1905 12:00:00 AM
  • Firstpage
    43
  • Lastpage
    44
  • Keywords
    Breakdown voltage; Doping; Electric breakdown; Electrical resistance measurement; Gallium arsenide; Germanium silicon alloys; Heterojunction bipolar transistors; Molecular beam epitaxial growth; Silicon germanium; Thermal conductivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 1994. 52nd Annual
  • Type

    conf

  • DOI
    10.1109/DRC.1994.1009408
  • Filename
    1009408
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1721517