DocumentCode
1721606
Title
Double-sided rugged poly Si FIN STC (stacked capacitor cell) technology for high density DRAMs
Author
Ogihara, H. ; Yoshimaru, M. ; Takase, S. ; Kurogi, H. ; Tamura, H. ; Kita, A. ; Ino, M.
Author_Institution
Oki Electric Industry Co., Ltd.
fYear
1994
fDate
6/16/1905 12:00:00 AM
Firstpage
53
Lastpage
54
Keywords
Capacitance; Capacitance-voltage characteristics; Capacitors; Degradation; Frequency; Ion implantation; Random access memory; Research and development; Shape control; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 1994. 52nd Annual
Type
conf
DOI
10.1109/DRC.1994.1009413
Filename
1009413
Link To Document