Title :
Double-sided rugged poly Si FIN STC (stacked capacitor cell) technology for high density DRAMs
Author :
Ogihara, H. ; Yoshimaru, M. ; Takase, S. ; Kurogi, H. ; Tamura, H. ; Kita, A. ; Ino, M.
Author_Institution :
Oki Electric Industry Co., Ltd.
fDate :
6/16/1905 12:00:00 AM
Keywords :
Capacitance; Capacitance-voltage characteristics; Capacitors; Degradation; Frequency; Ion implantation; Random access memory; Research and development; Shape control; Very large scale integration;
Conference_Titel :
Device Research Conference, 1994. 52nd Annual
DOI :
10.1109/DRC.1994.1009413
