Title :
Thermal characterisation of threshold voltage and short channel effect of thin film SOI MOSFET
Author :
Aggarwal, Vanccta ; Gupta, R.S.
Author_Institution :
Dept. of Phys., Delhi Univ., India
fDate :
11/1/1999 12:00:00 AM
Abstract :
This paper evolves analytically, for the first lime an absolute expression for temperature dependent short-channel threshold voltage reduction and temperature coefficient of threshold voltage of a thin film fully depleted SOI MOSFET. The model, applicable in the enhanced range of temperature (25°C<T<200°C), is applicable for compact MMIC design and circuit/device simulation and can further be modified for low temperature regime as well
Keywords :
MOSFET; semiconductor device models; silicon-on-insulator; thin film transistors; 25 to 200 C; MMIC design; analytical model; circuit simulation; device simulation; short channel effect; temperature dependence; thermal characteristics; thin-film fully-depleted SOI MOSFET; threshold voltage; Computer hacking; Doping; MOSFET circuits; Physics; Silicon; Temperature; Transistors; Voltage;
Conference_Titel :
Microwave Conference, 1999 Asia Pacific
Print_ISBN :
0-7803-5761-2
DOI :
10.1109/APMC.1999.829909
