DocumentCode :
1721778
Title :
Direct gate-controlled NDR characteristics in surface tunnel transistor
Author :
Uemura, T. ; Baba, T.
Author_Institution :
NEC Corporation
fYear :
1994
fDate :
6/16/1905 12:00:00 AM
Firstpage :
65
Lastpage :
66
Keywords :
Bistable circuits; Doping; Electrodes; Fabrication; Laboratories; National electric code; Research and development; Resistors; Resonant tunneling devices; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 1994. 52nd Annual
Type :
conf
DOI :
10.1109/DRC.1994.1009418
Filename :
1009418
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1721778
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