DocumentCode
1721778
Title
Direct gate-controlled NDR characteristics in surface tunnel transistor
Author
Uemura, T. ; Baba, T.
Author_Institution
NEC Corporation
fYear
1994
fDate
6/16/1905 12:00:00 AM
Firstpage
65
Lastpage
66
Keywords
Bistable circuits; Doping; Electrodes; Fabrication; Laboratories; National electric code; Research and development; Resistors; Resonant tunneling devices; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 1994. 52nd Annual
Type
conf
DOI
10.1109/DRC.1994.1009418
Filename
1009418
Link To Document