DocumentCode
1721792
Title
Static random access memories based on resonant interband tunneling diodes in the InAs/GaSb/AlSb material system
Author
Shen, J. ; Kramer, G. ; Tehrani, S. ; Goronkin, H. ; Zhu, T. ; Tsui, R.
Author_Institution
Motorola
fYear
1994
fDate
6/16/1905 12:00:00 AM
Firstpage
67
Lastpage
68
Keywords
Conducting materials; Diodes; Electrons; Photonic band gap; Random access memory; Research and development; Resonance; Resonant tunneling devices; Switches; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 1994. 52nd Annual
Type
conf
DOI
10.1109/DRC.1994.1009419
Filename
1009419
Link To Document