Static random access memories based on resonant interband tunneling diodes in the InAs/GaSb/AlSb material system
Author :
Shen, J. ; Kramer, G. ; Tehrani, S. ; Goronkin, H. ; Zhu, T. ; Tsui, R.
Author_Institution :
Motorola
fYear :
1994
fDate :
6/16/1905 12:00:00 AM
Firstpage :
67
Lastpage :
68
Keywords :
Conducting materials; Diodes; Electrons; Photonic band gap; Random access memory; Research and development; Resonance; Resonant tunneling devices; Switches; Voltage;
