• DocumentCode
    1721804
  • Title

    Evaluation of hFE fluctuation of high-performance IDP emitter transistors by using test structures

  • Author

    Tamaki, Yoichi ; Hashimoto, Takashi ; Watanabe, Kunihiko ; Shiba, Takeo

  • Author_Institution
    Device Dev. Center, Hitachi Ltd., Tokyo, Japan
  • fYear
    1997
  • Firstpage
    184
  • Lastpage
    187
  • Abstract
    Current gain (hFE) fluctuation of in-situ phosphorus doped polysilicon (IDP) emitter transistors has been analyzed using a new test structure. From the electrical data, it has been revealed that there are some transistors with low hFE at random distribution in a wafer and also in a chip. Further experiments and TEM analysis show the phenomenon is mainly due to the interfacial condition between emitter poly-Si and mono-Si
  • Keywords
    bipolar transistors; elemental semiconductors; phosphorus; semiconductor device testing; silicon; transmission electron microscopy; IDP emitter transistor; Si:P; TEM; current gain fluctuation; in-situ phosphorus doped polysilicon; test structure; Amorphous silicon; BiCMOS integrated circuits; Bipolar transistors; Cutoff frequency; Fluctuations; Laboratories; Production; Temperature; Testing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronic Test Structures, 1997. ICMTS 1997. Proceedings. IEEE International Conference on
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    0-7803-3243-1
  • Type

    conf

  • DOI
    10.1109/ICMTS.1997.589388
  • Filename
    589388
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1721804