Title :
Evaluation of hFE fluctuation of high-performance IDP emitter transistors by using test structures
Author :
Tamaki, Yoichi ; Hashimoto, Takashi ; Watanabe, Kunihiko ; Shiba, Takeo
Author_Institution :
Device Dev. Center, Hitachi Ltd., Tokyo, Japan
Abstract :
Current gain (hFE) fluctuation of in-situ phosphorus doped polysilicon (IDP) emitter transistors has been analyzed using a new test structure. From the electrical data, it has been revealed that there are some transistors with low hFE at random distribution in a wafer and also in a chip. Further experiments and TEM analysis show the phenomenon is mainly due to the interfacial condition between emitter poly-Si and mono-Si
Keywords :
bipolar transistors; elemental semiconductors; phosphorus; semiconductor device testing; silicon; transmission electron microscopy; IDP emitter transistor; Si:P; TEM; current gain fluctuation; in-situ phosphorus doped polysilicon; test structure; Amorphous silicon; BiCMOS integrated circuits; Bipolar transistors; Cutoff frequency; Fluctuations; Laboratories; Production; Temperature; Testing; Voltage;
Conference_Titel :
Microelectronic Test Structures, 1997. ICMTS 1997. Proceedings. IEEE International Conference on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-3243-1
DOI :
10.1109/ICMTS.1997.589388
