Impact of highly-doped s/d extension on the current drivability and reliability in 0.15μm CMOS

Author

Nara, Y. ; Kurata, H. ; Yamazaki, T. ; Sugii, T.

Author_Institution

Fujitsu Laboratories Ltd.

fYear

1994

fDate

6/16/1905 12:00:00 AM

Firstpage

Lastpage

Keywords

Capacitance; Fabrication; Hot carriers; Implants; Impurities; MOS devices; MOSFETs; Stress; Surface resistance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 1994. 52nd Annual

Type

DOI

10.1109/DRC.1994.1009420

Filename

1009420

Link To Document