DocumentCode
1721914
Title
The importance of inversion-layer capacitance in Si MOSFETs in the ultra-thin gate oxide regime
Author
Takagi, Shin-ichi ; Toriumi, Akira
Author_Institution
TOSHIBA Corporation
fYear
1994
fDate
6/16/1905 12:00:00 AM
Firstpage
83
Lastpage
84
Keywords
Capacitance measurement; Degradation; Germanium silicon alloys; Laboratories; MOSFETs; Quantum capacitance; Quantum mechanics; Silicon germanium; Temperature dependence; Thickness measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 1994. 52nd Annual
Type
conf
DOI
10.1109/DRC.1994.1009425
Filename
1009425
Link To Document