• DocumentCode
    1721965
  • Title

    GaInP/GaAs HBTs with selectively regrown emitter and wide bandgap extrinsic base

  • Author

    Fu, S.L. ; Park, Soojin ; Hsin, Y.M. ; Ho, M.C. ; Chin, T.P. ; Yu, P.L. ; Tu, C.W. ; Asbeck, P.M.

  • Author_Institution
    Hitachi Central Research
  • fYear
    1994
  • fDate
    6/16/1905 12:00:00 AM
  • Firstpage
    91
  • Lastpage
    92
  • Keywords
    Epitaxial growth; Etching; Gallium arsenide; Heterojunction bipolar transistors; III-V semiconductor materials; Indium gallium arsenide; Laboratories; Parasitic capacitance; Photonic band gap; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 1994. 52nd Annual
  • Type

    conf

  • DOI
    10.1109/DRC.1994.1009428
  • Filename
    1009428
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1721965