DocumentCode :
1721965
Title :
GaInP/GaAs HBTs with selectively regrown emitter and wide bandgap extrinsic base
Author :
Fu, S.L. ; Park, Soojin ; Hsin, Y.M. ; Ho, M.C. ; Chin, T.P. ; Yu, P.L. ; Tu, C.W. ; Asbeck, P.M.
Author_Institution :
Hitachi Central Research
fYear :
1994
fDate :
6/16/1905 12:00:00 AM
Firstpage :
91
Lastpage :
92
Keywords :
Epitaxial growth; Etching; Gallium arsenide; Heterojunction bipolar transistors; III-V semiconductor materials; Indium gallium arsenide; Laboratories; Parasitic capacitance; Photonic band gap; Thermal resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 1994. 52nd Annual
Type :
conf
DOI :
10.1109/DRC.1994.1009428
Filename :
1009428
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1721965
