DocumentCode
1721969
Title
Parameter extraction for electrolyte-gated organic field effect transistor modeling
Author
Tu, Deyu ; Forchheimer, Robert ; Herlogsson, Lars ; Crispin, Xavier ; Berggren, Magnus
Author_Institution
Inf. Coding, ISY, Linkoping Univ., Linkoping, Sweden
fYear
2011
Firstpage
853
Lastpage
856
Abstract
We present a methodology to extract parameters for an electrolyte-gated organic field effect transistor DC model. The model is based on charge drift/diffusion transport under electric field and covers all regimes. Voltage dependent capacitance, mobility, contact resistance and threshold voltage shift are taken into account in this model. The feature parameters in the model are simply extracted from the transfer or output characteristics of electrolyte-gated organic field effect transistors. The extracted parameters are verified by good agreements between experimental and simulated results.
Keywords
contact resistance; electric fields; organic field effect transistors; semiconductor device models; charge drift-diffusion transport; contact resistance; electric field; electrolyte-gated organic field effect transistor DC model; feature parameters; parameter extraction; threshold voltage shift; voltage dependent capacitance; Contact resistance; Fitting; Integrated circuit modeling; Mathematical model; OFETs; Threshold voltage; electric double layer capacitance; field effect transistors; modeling; parameter extraction;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuit Theory and Design (ECCTD), 2011 20th European Conference on
Conference_Location
Linkoping
Print_ISBN
978-1-4577-0617-2
Electronic_ISBN
978-1-4577-0616-5
Type
conf
DOI
10.1109/ECCTD.2011.6043825
Filename
6043825
Link To Document