DocumentCode :
1721969
Title :
Parameter extraction for electrolyte-gated organic field effect transistor modeling
Author :
Tu, Deyu ; Forchheimer, Robert ; Herlogsson, Lars ; Crispin, Xavier ; Berggren, Magnus
Author_Institution :
Inf. Coding, ISY, Linkoping Univ., Linkoping, Sweden
fYear :
2011
Firstpage :
853
Lastpage :
856
Abstract :
We present a methodology to extract parameters for an electrolyte-gated organic field effect transistor DC model. The model is based on charge drift/diffusion transport under electric field and covers all regimes. Voltage dependent capacitance, mobility, contact resistance and threshold voltage shift are taken into account in this model. The feature parameters in the model are simply extracted from the transfer or output characteristics of electrolyte-gated organic field effect transistors. The extracted parameters are verified by good agreements between experimental and simulated results.
Keywords :
contact resistance; electric fields; organic field effect transistors; semiconductor device models; charge drift-diffusion transport; contact resistance; electric field; electrolyte-gated organic field effect transistor DC model; feature parameters; parameter extraction; threshold voltage shift; voltage dependent capacitance; Contact resistance; Fitting; Integrated circuit modeling; Mathematical model; OFETs; Threshold voltage; electric double layer capacitance; field effect transistors; modeling; parameter extraction;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuit Theory and Design (ECCTD), 2011 20th European Conference on
Conference_Location :
Linkoping
Print_ISBN :
978-1-4577-0617-2
Electronic_ISBN :
978-1-4577-0616-5
Type :
conf
DOI :
10.1109/ECCTD.2011.6043825
Filename :
6043825
Link To Document :
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