• DocumentCode
    1721969
  • Title

    Parameter extraction for electrolyte-gated organic field effect transistor modeling

  • Author

    Tu, Deyu ; Forchheimer, Robert ; Herlogsson, Lars ; Crispin, Xavier ; Berggren, Magnus

  • Author_Institution
    Inf. Coding, ISY, Linkoping Univ., Linkoping, Sweden
  • fYear
    2011
  • Firstpage
    853
  • Lastpage
    856
  • Abstract
    We present a methodology to extract parameters for an electrolyte-gated organic field effect transistor DC model. The model is based on charge drift/diffusion transport under electric field and covers all regimes. Voltage dependent capacitance, mobility, contact resistance and threshold voltage shift are taken into account in this model. The feature parameters in the model are simply extracted from the transfer or output characteristics of electrolyte-gated organic field effect transistors. The extracted parameters are verified by good agreements between experimental and simulated results.
  • Keywords
    contact resistance; electric fields; organic field effect transistors; semiconductor device models; charge drift-diffusion transport; contact resistance; electric field; electrolyte-gated organic field effect transistor DC model; feature parameters; parameter extraction; threshold voltage shift; voltage dependent capacitance; Contact resistance; Fitting; Integrated circuit modeling; Mathematical model; OFETs; Threshold voltage; electric double layer capacitance; field effect transistors; modeling; parameter extraction;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuit Theory and Design (ECCTD), 2011 20th European Conference on
  • Conference_Location
    Linkoping
  • Print_ISBN
    978-1-4577-0617-2
  • Electronic_ISBN
    978-1-4577-0616-5
  • Type

    conf

  • DOI
    10.1109/ECCTD.2011.6043825
  • Filename
    6043825