DocumentCode :
1721994
Title :
Characterization of degradation mechanisins in GaAs/AlGaas heterojunction bipolar transistors
Author :
Frei, M.R. ; Abernathy, C.R. ; Chiu, T.Y. ; Fullowan, T.R. ; Lothian, J.R. ; Montgomery, R.K. ; Pearton, S.J. ; Ren, F. ; Smith, P.R. ; Snyder, C.W. ; Tseng, B. ; Weiner, J. ; Wisk, P.W.
Author_Institution :
AT&T Bell Laboratories
fYear :
1994
fDate :
6/16/1905 12:00:00 AM
Firstpage :
93
Lastpage :
94
Keywords :
Degradation; Electrons; Gallium arsenide; Geometry; Heterojunction bipolar transistors; Implants; Stress; Temperature; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 1994. 52nd Annual
Type :
conf
DOI :
10.1109/DRC.1994.1009429
Filename :
1009429
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1721994
