Characterization of degradation mechanisins in GaAs/AlGaas heterojunction bipolar transistors

Author

Frei, M.R. ; Abernathy, C.R. ; Chiu, T.Y. ; Fullowan, T.R. ; Lothian, J.R. ; Montgomery, R.K. ; Pearton, S.J. ; Ren, F. ; Smith, P.R. ; Snyder, C.W. ; Tseng, B. ; Weiner, J. ; Wisk, P.W.

Author_Institution

AT&T Bell Laboratories

fYear

1994

fDate

6/16/1905 12:00:00 AM

Firstpage

Lastpage

Keywords

Degradation; Electrons; Gallium arsenide; Geometry; Heterojunction bipolar transistors; Implants; Stress; Temperature; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 1994. 52nd Annual

Type

DOI

10.1109/DRC.1994.1009429

Filename

1009429

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