DocumentCode :
1722000
Title :
Microelectromechanical structures in langasite (La3Ga5SiO14) by wet chemical etching
Author :
Ansorge, E. ; Schimpf, S. ; Hirsch, S. ; Schmidt, B. ; Sauerwald, J. ; Fritze, H.
Author_Institution :
Inst. for Micro- & Sensor Syst., Otto-von-Guericke Univ. of Magdeburg, Germany
Volume :
1
fYear :
2005
Firstpage :
908
Abstract :
Lanthanum gallium silicate (langasite, La3Ga5SiO14) is a new piezoelectric material with promising properties for micro-electromechanical applications at high temperatures. So far it has been used for SAW and BAW devices. This paper reports on the possibility of fabricating microstructures in langasite by wet chemical etching. The etching behavior of different chemicals applying different mask materials was investigated. Further, the effect of doping on the etching behavior was studied. As a first demonstrator a cantilever beam in langasite has been produced showing the possibility of MEMS in langasite. The resonance spectrum of this device was recorded at temperatures up to 600°C.
Keywords :
etching; gallium compounds; lanthanum compounds; masks; micromachining; micromechanical devices; piezoelectric materials; 600 degC; La3Ga5SiO14; cantilever beam resonance spectrum; doping effects; high temperature MEMS; langasite; mask materials; microelectromechanical structures; micromachining; microstructure fabrication; piezoelectric material; wet chemical etching; Bulk acoustic wave devices; Chemicals; Doping; Gallium; Lanthanum; Microstructure; Piezoelectric materials; Surface acoustic waves; Temperature; Wet etching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05. The 13th International Conference on
Print_ISBN :
0-7803-8994-8
Type :
conf
DOI :
10.1109/SENSOR.2005.1496565
Filename :
1496565
Link To Document :
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