Title :
New equivalent circuit model for HEMT
Author :
Ma, J.C. ; Lee, T.H. ; Yeo, Kiat Seng ; Do, M.A.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., Singapore
fDate :
11/1/1999 12:00:00 AM
Abstract :
AC I-V behavior between the terminals of a HEMT are investigated experimentally from several hundred Hz to 1 MHz. The results show that the AC I-V characteristics among the terminals, such as drain-source, gate-source, and gate drain, are the same as those of an LC tank, thus, a new equivalent circuit model in the AC frequency range is proposed based on the AC measurements. For the first time, inductors are introduced. The simulations agree well with the measured I-V behavior
Keywords :
equivalent circuits; high electron mobility transistors; microwave field effect transistors; semiconductor device models; 1 MHz; AC I-V behavior; HEMT; I-V characteristics; equivalent circuit model; Admittance measurement; Circuit simulation; Circuit topology; Current measurement; Equivalent circuits; Frequency measurement; HEMTs; Inductors; Microelectronics; Monitoring;
Conference_Titel :
Microwave Conference, 1999 Asia Pacific
Print_ISBN :
0-7803-5761-2
DOI :
10.1109/APMC.1999.829922
