DocumentCode :
1722036
Title :
Carbon-doped base InP/InGaAs HBTs with f
T
= 200 GHz
Author :
Song, J.I. ; Chough, K.B. ; Palmstrom, C. ; Van Der Gaag, B.P. ; Hong, W.P.
Author_Institution :
Bellcore
fYear :
1994
fDate :
6/16/1905 12:00:00 AM
Firstpage :
97
Lastpage :
98
Keywords :
Fingers; Frequency dependence; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 1994. 52nd Annual
Type :
conf
DOI :
10.1109/DRC.1994.1009431
Filename :
1009431
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1722036
