DocumentCode

1722036

Title

Carbon-doped base InP/InGaAs HBTs with f_T = 200 GHz

Author

Song, J.I. ; Chough, K.B. ; Palmstrom, C. ; Van Der Gaag, B.P. ; Hong, W.P.

Author_Institution

Bellcore

fYear

1994

fDate

6/16/1905 12:00:00 AM

Firstpage

97

Lastpage

98

Keywords

Fingers; Frequency dependence; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 1994. 52nd Annual

Type

conf

DOI

10.1109/DRC.1994.1009431

Filename

1009431