Title :
Test structures to measure the heat capacity of CMOS layer sandwiches
Author :
von Arx, M. ; Paul, O. ; Baltes, H.
Author_Institution :
Lab. of Phys. Electron., Eidgenossische Tech. Hochschule, Zurich, Switzerland
Abstract :
We report novel thermal characterization microstructures to measure the heat capacity c of CMOS IC layer sandwiches. This parameter is relevant, e.g., for the dynamic response of thermal CMOS microtransducers. The test structures were fabricated using the commercial 2 μm low voltage CMOS process of EM Microelectronic Marin, Switzerland, followed by maskless micromachining. At 300 K, volumetric heat capacities of 1.74±0.13×106 Jm-3 K-1 and 2.23±1.87× 106 Jm-3 K-1 for the sandwich of CMOS dielectrics and for the lower CMOS metal, respectively, were obtained
Keywords :
CMOS integrated circuits; integrated circuit measurement; integrated circuit testing; specific heat; thermal variables measurement; CMOS IC layer sandwich; dynamic response; heat capacity measurement; low voltage process; maskless micromachining; test structure; thermal characterization microstructure; thermal microtransducer; Amorphous silicon; Arm; CMOS integrated circuits; CMOS process; Conducting materials; Resistors; Temperature; Testing; Thermal conductivity; Thermal sensors;
Conference_Titel :
Microelectronic Test Structures, 1997. ICMTS 1997. Proceedings. IEEE International Conference on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-3243-1
DOI :
10.1109/ICMTS.1997.589399
